Characterization of non-vacuum CuInxGa1 ? xSe2 thin films prepared by low-cost sequential electrodeposition technique
By Yildirim, H.; Peksoz, A.
Published in Thin Solid Films
NULL
2017
Abstract
Abstract Copper indium gallium diselenide (CuInxGa1 ? xSe2) thin films were grown on indium tin oxide coated glass substrate by a sequential electrodeposition technique. The deposition bath consisted of an aqueous solution of 10 mM CuCl2, 10 mM InCl3, 20 mM GaCl3, 20 mM {H2SeO3} as precursors, and 200 mM LiCl. The pH of the solution was adjusted to 1.7 by adding HCl. Cu, In, Cu, Ga, Cu, Se components were deposited sequentially. Cu/In/Cu/Ga/Cu/Se stacked layers were annealed at 250, 350, 450 and 550
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