Photoelectrochemical performance of ZnCdSe-sensitized {WO3} thin films
By Gakhar, Ruchi; Chidambaram, Dev
Published in Solar Energy Materials and Solar Cells
NULL
2016
Abstract
Abstract Due to its wide gap, {WO3} mostly absorbs only the ultraviolet radiation, resulting into lower charge collection and thus necessitating the coupling (doping or sensitization) of {WO3} with low band gap materials so as to achieve the photoexcitation and charge separation. This study reports the sensitization of {WO3} films with ternary quantum dots (ZnCdSe) using {SILAR} technique for the first time. The porous {WO3} layer was spray deposited using ammonium metatungstate as precursor. The structural, surface morphological and optical properties of the sensitized {WO3} thin films were studied. Photoelectrochemical (PEC) studies of the sensitized films showed superior performance to that of unmodified {WO3} films. Photocurrent density of 8.53 mA/cm2 (at 0 V vs Ag/AgCl) was observed for film sensitized with 9 cycles of {SILAR} deposition annealed at 400
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