Control of the Band-Edge Positions of Crystalline Si(111) by Surface Functionalization with 3,4,5-Trifluorophenylacetylenyl Moieties
By Plymale, Noah T.; Ramachandran, Anshul A.; Lim, Allison; Brunschwig, Bruce S.; Lewis, Nathan S.
Published in The Journal of Physical Chemistry C
NULL
2016
Abstract
Functionalization of semiconductor surfaces with organic moieties can change the charge distribution, surface dipole, and electric field at the interface. The modified electric field will shift the semiconductor band-edge positions relative to those of a contacting phase. Achieving chemical control over the energetics at semiconductor surfaces promises to provide a means of tuning the band-edge energetics to form optimized junctions with a desired material. Si(111) surfaces functionalized with 3,4,5-trifluorophenylacetylenyl (TFPA) groups were characterized by transmission infrared spectroscopy, X-ray photoelectron spectroscopy, and surface recombination velocity measurements. Mixed methyl/TFPA-terminated (MMTFPA) n- and p-type Si(111) surfaces were synthesized and characterized by electrochemical methods. Current density versus voltage and Mott
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