Electrochemical corrosion effects and chemical mechanical polishing characteristics of tungsten film using mixed oxidizers
By Seo, Yong-Jin; Kim, Nam-Hoon & Lee, Woo-Sun
Published in Microelectronic Engineering
NULL
2006
Abstract
In this paper, the effects of mixed oxidizers on tungsten-chemical mechanical polishing (W-CMP) process were studied using three different kinds of oxidizers such as Fe(NO3)3, KIO3 and H2O2. Moreover, the interaction between the tungsten film and the oxidizer was discussed by potentiodynamic polarization test, in order to compare the CMP performances and electrochemical behavior of the tungsten film as a function of mixed oxidizers. The potentiodynamic polarization results indicated that the corrosion current densities of the 5 wt% H2O2 and 5 wt% H2O2 + 5 wt% Fe(NO3)3 were higher than the other mixed oxidizers. Such an electrochemical corrosion effect implies that slurries with the highest removal rate have a high dissolution rate at lower pH. Therefore, we conclude that W-CMP performances are strongly dependent on the kind of oxidizers and the amounts of oxidizer additive.
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