High-Throughput Fabrication of Photoconductors with High Detectivity, Photosensitivity, and Bandwidth
By Xing, Wendong; Kung, Sheng-Chin; van der Veer, Wytze E.; Yan, Wenbo; Ayvazian, Talin; Kim, Jung Yun & Penner, Reginald M.
Published in ACS Nano
NULL
2012
Abstract
Nanocrystalline cadmium selenide (nc-CdSe) was electrodeposited within a sub-50 nm gold nanogap, prepared by feedback-controlled electromigration, to form a photoconductive metal -semiconductor -metal nanojunction. Both gap formation and electrodeposition were rapid and automated. The electrodeposited nc-CdSe was stoichiometric, single cubic phase with a mean grain diameter of ∼7 nm. Optical absorption, photoluminescence, and the spectral photoconductivity response of the nc-CdSe were all dominated by band-edge transitions. The photoconductivity of these nc-CdSe-filled gold nanogaps was characterized by a detectivity of 6.9 × 1010 Jones and a photosensitivity of 500. These devices also demonstrated a maximum photoconductive gain of ∼45 and response and recovery times below 2 μs, corresponding to a 3 dB bandwidth of at least 175 kHz.
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